Strained silicon heterostructures materials and devices

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in silicon heterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical...

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Bibliographic Details
Other Authors: Maiti, C. K. (Editor), Chakrabarti, N. B. (Editor), Ray, S. K. Dr (Editor)
Format: Electronic Resource
Language:English
Published: London, United Kingdom Institution of Engineering and Technology 2001.
Subjects:
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